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Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 552-562

Theoretical analysis of the micro-pulling-down process for GexSi1-x fiber crystal growth

(3) Lan, C W a Uda, S b Fukuda, T c

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b MITSUBISHI MATERIALS CORPORATION (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

Computer simulation; Convection; Fiber growth; Micro pulling down; Segregation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE VOLUME METHOD; HEAT CONVECTION; SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS; THERMAL EFFECTS;

MICRO-PULLING-DOWN PROCESS; NEWTON'S METHOD;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0032475545 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00527-2 Document Type: Article

Times cited : (18)

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