Operating limits for stable growth of silicon fibers with diameter less than 150 μm by modified μ-PD method

Crystal Research and Technology

Volumn 31, Issue 8, 1996, Pages 1077-1084

  Epelbaum, Boris M ^a,b   Shimamura, Kiyoshi ^a   Uda, Satoshi ^a   Kon, Junichi ^a   Fukuda, Tsuguo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GRAPHITE; OSCILLATIONS; PARTIAL DISCHARGES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SYNTHETIC FIBERS;

SILICON FIBERS;

SEMICONDUCTING SILICON;

EID: 0030380908     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170310817     Document Type: Article

References (9)

1. KALEJS, J. P., ETTOUNEY, H. M., BROWN, R. A.: J. Cryst. Growth 65 (1983) 316-323
2. KOBAYASHI, N.: J. Cryst. Growth 43 (1978) 417-421
3. LEIPOLD, M. N., O'DONNELL, T. P., HAGAN, M. A.: J. Cryst. Growth 50 (1980) 366-377
4. SCHAFER, N., YAMADA, T., SHIMAMURA, K., KOH, H. J., FUKUDA, T.: J. Cryst. Growth (1996) to be published
5. SHIMAMURA, K., UDA, S., YAMADA, T., SAKAGUCHI, S. and FUKUDA, T.: Jpn. J. Appl. Phys. 35 (1996) to be published
6. SURER, T.: J. Appl. Phys. 47 (1) (1976) 4384-4393
7. TATARCHENKO, V. A.: Shaped crystal growth, Kluwer, Dordrecht, 1993
8. TATARCHENKO. V. A.: in: Handbook of Crystal Growth, Vol. 2, ed. by D. T. J. Hurtle, Elsevier Science, Amsterdam 1994, p. 1046
9. YOON, D. H., YONENAGA, I., FUKUDA, T., OHNISHI, N.: J. Cryst. Growth 142 (1994) 339-343