Analysis of Ge distribution in Si1-xGex single crystal fibers by the micro-pulling down method

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 64-73

  Uda, Satoshi ^a   Kon, Junichi ^b   Shimamura, Kiyoshi ^b   Fukuda, Tsuguo ^b  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; FLOW MEASUREMENT; MASS TRANSFER; PHASE INTERFACES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

CAPILLARY ZONE; EQUILIBRIUM PARTITION COEFFICIENT; IMPURITY MASS FLOW; MICRO PULLING DOWN METHOD; MOLTEN ZONE VOLUME SIZE; SOLUTE ACCUMULATION VOLUME; STEADY STATE GROWTH;

CRYSTAL WHISKERS;

EID: 0030565221     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00237-0     Document Type: Article

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