Kinetics of hydrogen desorption from germanium-covered Si(100)

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 51-68

  Russell, N M ^a,b   Ekerdt, J G ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Digermane; Disilane; Germanium; Hydrides; Hydrogen; Low index single crystal surfaces; Models of surface chemical reactions; Models of surface kinetics; Semi empirical models and model calculations; Semiconducting surfaces; Silicon; Silicon germanium

Indexed keywords

ACTIVATION ENERGY; ATOMIC SPECTROSCOPY; DESORPTION; HYDROGEN; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON; SINGLE CRYSTALS; SURFACE STRUCTURE; THERMAL DIFFUSION IN SOLIDS;

DIGERMANE; DISILANE; SILICON MONOHYDRIDE DESORPTION KINETICS; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0030399580     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00888-6     Document Type: Article

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