Thin film transistors based on sputtered silicon and gate oxide films

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1996, Pages 41-44

  Jelenkovic, Emil V ^a   Tong, K Y ^a   Ong, C W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; PARAMAGNETIC RESONANCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FURNACE CRYSTALLIZATION; GATE OXIDE FILMS; SPUTTERED SILICON;

THIN FILM TRANSISTORS;

EID: 0030384042     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)