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Volumn 125, Issue 1, 1998, Pages 6-10
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Laterally-resolved study of the Au/SiN x /GaAs(100) interface
a
EPFL
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
ELECTRONIC DENSITY OF STATES;
GOLD;
OPTICAL MICROSCOPY;
PHOTOCONDUCTIVITY;
PHOTONS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON NITRIDE;
SCANNING NEAR FIELD OPTICAL MICROSCOPY;
SCHOTTKY BARRIERS;
HETEROJUNCTIONS;
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EID: 0032472133
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)00411-X Document Type: Article |
Times cited : (9)
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References (13)
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