Surface morphologies associated with thermal desorption: Scanning tunneling microscopy studies of Br-GaAs(110)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 3, 1997, Pages 605-609

  Cha, C Y ^a   Brake, J ^a   Man, B Y ^a   Owens, D W ^a   Weaver, J H ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; CHEMICAL REACTIONS; ETCHING; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION;

ATOM LEVEL REACTION MECHANISM; SURFACE HALOGEN CONCENTRATION; TERRACE PIT INITIATION;

SCANNING TUNNELING MICROSCOPY;

EID: 0031145714     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589300     Document Type: Article

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