Electron tunneling in nc-Si/a-SiO2 double-barrier diode

Chinese Physics Letters

Volumn 15, Issue 3, 1998, Pages 216-218

  Lu, Hai ^a   Gu, Xiao Feng ^a   Qin, Hua ^a   Li, Wei ^a   Chen, Kun Ji ^a   Huang, Xin Fan ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

BARRIER DIODES; CONDUCTANCE PEAKS; DOUBLE BARRIERS; EQUIVALENT CIRCUIT METHOD; HYDROGEN DILUTED SILANE; MATRIX; SILANE PLASMAS; SINGLE LAYER; THERMAL ANNEALING TREATMENT; TRANSPORT CHARACTERISTICS;

SILICA;

EID: 0032388495     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/15/3/023     Document Type: Article

References (8)

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