Structural and electrical properties of Bi4Ti3O12 films grown on very thin thermal silicon oxide layers

Journal of the Korean Physical Society

Volumn 32, Issue 4 SUPPL., 1998, Pages

  Hyun, S J ^a   Park, B H ^a   Mun, S H ^a   Noh, T W ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032374682     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. B. H. Park, T. W. Noh, J. Lee, C. Y. Kim and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).
2. C. H. Ahn, R. H. Hammond, T. H. Gegalle, M. R. Beasley, J. -M. Triscone, M. Decroux, Ø. Fisher, L. Antognazza and K. Char, Appl. Phys. Lett. 70, 206 (1997).
3. Jun Yu, ZhaoJian Hong, Wenli Zhou, Guanjun Cao, Jifan Xie, Xingjiao Li, Shaoping Li, and Zhuang Li, Appl. Phys. Lett. 70, 490 (1997).
4. S. Y. Wu, IEEE Trans. Electron Devices ED-21, 499 (1974).
5. H. Buhay, S. Sinharoy, W. H. Kasner, M. H. Francombe, D. R. Lampe and E. Stepke, Appl. Phys. Lett. 58, 1470 (1991).
6. K. Sugibuchi, Y. Kurogi and N. Endo, J. Appl. Phys. 46, 2877 (1975).
7. Y. Furuhata, in Landolt-Börnstein New Series III, edited by K. -H. Hellwege and A. M. Hellwege (Springer-Verlag, Berlin, 1969).
8. V. R. Palkar, S. C Purandare, S. P. Pai, S. Chattopadhyay, P. R. Pinto and M. S. Multani, Appl. Phys. Lett. 68, 1582 (1996).
9. S. L. Miller and P. J. McWhorter, J. Appl. Phys. 72, 5999 (1992).