Terahertz response of metal-semiconductor-metal photodetectors

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 6419-6425

  Ryzhii, M ^a,b   Willander, M ^a   Khmyrova, I ^b   Ryzhii, V ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTRIC FIELD EFFECTS; ELECTRONS; FOURIER TRANSFORMS; FREQUENCY RESPONSE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; POISSON DISTRIBUTION; SEMICONDUCTING GALLIUM ARSENIDE; TWO DIMENSIONAL; VELOCITY;

CONTACT SPACING; METAL SEMICONDUCTOR METAL PHOTODETECTORS; NONMONOTONIC FUNCTION; PHOTOEXCITED ELECTRONS; ULTRAHIGH FREQUENCY RESPONSE; VELOCITY OVERSHOOT EFFECT;

PHOTODETECTORS;

EID: 0032357673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368969     Document Type: Article

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