Transit-time limited high-frequency response characteristics of MSM photodetectors

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1838-1843

  Chen, Jau Wen ^a   Kim, Dae Kaen ^a   Das, Mukunda B ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; FREQUENCY DOMAIN ANALYSIS; FREQUENCY MODULATION; FREQUENCY RESPONSE; MATHEMATICAL MODELS; PHASE MODULATION;

ELECTRON TRANSIT TIMES; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; PHOTOGENERATED HOLES;

PHOTODETECTORS;

EID: 0030286666     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543016     Document Type: Article

References (15)

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