Critical thickness for the solid phase epitaxy: Si/Sb/Si(001)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 9 B, 1996, Pages

  Kono, Sh ^a   Goto, T ^a   Ogura, Y ^a   Abukawa, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; AUGER ELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DELTA-DOPING; SOLID PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 0030235738     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1211     Document Type: Article

References (17)