Low temperature activation method of poly-Si films using rapid thermal annealing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 119-126

  Hirano, Kiichi ^a   Sotani, Naoya ^a   Hasegawa, Isao ^a   Nohda, Tomoyuki ^a   Abe, Hisashi ^a   Hamada, Hiroki ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; GAS LASERS; ION BOMBARDMENT; ION IMPLANTATION; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; PHOSPHORUS; POLYSILICON; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SHEET RESISTANCE; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

EXCIMER LASER ANNEALING; FIELD EFFECTS; ION IMPLANTATION METHODS; LOW RESISTIVITY; LOW TEMPERATURE (LTR); LOW TEMPERATURE ACTIVATION; N CHANNEL; NOVEL PROCESSES; PROCESS TEMPERATURES; PROCESSING TECHNOLOGIES; SI FILMS; SUBTHRESHOLD SWING (SS);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 24944511016     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270285     Document Type: Conference Paper

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