Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter

Medical Physics

Volumn 21, Issue 4, 1994, Pages 567-572

  Soubra, M ^a   Cygler, J ^a   Mackay, G ^b  

^a OTTAWA REGIONAL CANCER CENTRE   (Canada)

^b Thomson Nielsen   (Canada)

Author keywords

MOSFET; radiation dosimeter

Indexed keywords

DOSIMETERS; DOSIMETRY; IRRADIATION; METALLIC COMPOUNDS; METALS; MOSFET DEVICES; RADIATION; RADIATION DECONTAMINATION; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TRANSISTORS;

CONTINUOUS MONITORING; MODES OF OPERATION; MOS-FET; RADIATION DOSIMETERS; REPRODUCIBILITIES; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; THRESHOLD VOLTAGE SHIFTS; VOLTAGE-CONTROLLED;

SEMICONDUCTING SILICON;

METAL OXIDE; SILICON;

ARTICLE; DOSIMETER; DOSIMETRY; ELECTRON THERAPY; PHOTOTHERAPY; PRIORITY JOURNAL; RADIATION DETECTION; SEMICONDUCTOR;

EID: 0028213977     PISSN: 00942405     EISSN: NA     Source Type: Journal    
DOI: 10.1118/1.597314     Document Type: Article

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