메뉴 건너뛰기




Volumn 45, Issue 6 PART 1, 1998, Pages 2799-2804

Total-dose radiation-hard diamond-based hydrogen sensor

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; HYDROGEN; IONIZING RADIATION; MIS DEVICES; RADIATION HARDENING; SEMICONDUCTING DIAMONDS;

EID: 0032318035     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736530     Document Type: Article
Times cited : (3)

References (13)
  • 3
    • 0019899403 scopus 로고    scopus 로고
    • Transition metal-gate gaseous detectors
    • B. Lalevic V.ED-29, pp.123-129, Jan 1982.
    • T. L. Poteat, B. LalevicTransition metal-gate gaseous detectors," IEEE Trans Electron Devices, V.ED-29, pp.123-129, Jan 1982.
    • IEEE Trans Electron Devices
    • Poteat, T.L.1
  • 4
    • 0023349875 scopus 로고    scopus 로고
    • Pd-SnOx MIS capacitor as a new type of O2 gaseous sensor
    • J. F. Xu, B. Lalevic, T. L. Poteat vol. EDL-8,pp. 211-213, May 1987.
    • W. P. Kang, J. F. Xu, B. Lalevic, T. L. PoteatPd-SnOx MIS capacitor as a new type of O2 gaseous sensor," IEEE Electron Device Letters, vol. EDL-8,pp. 211-213, May 1987.
    • IEEE Electron Device Letters
    • Kang, W.P.1
  • 5
    • 0026953110 scopus 로고    scopus 로고
    • A new family of gaseous sensors utilizing catalyst-adsorptive oxide-semiconductor MIS sructure
    • C. K. Kirn 50th annual Device Research Conference, v. 39, pp.2650-2651,Novl992.
    • W. P. Kang, C. K. KirnA new family of gaseous sensors utilizing catalyst-adsorptive oxide-semiconductor MIS sructure," IEEE Transactions on Electron Devices 50th annual Device Research Conference, v. 39, pp.2650-2651,Novl992.
    • IEEE Transactions on Electron Devices
    • Kang, W.P.1
  • 6
    • 0028531357 scopus 로고    scopus 로고
    • Performance and detection mechanism of a new class of catalyst (Pd, Pt, or Ag)adsorptive oxide (SnOx or ZnO)-insulator-semiconductor gas sensors
    • 22, 1994, pp. 4755.
    • W. P. Kang and C. K. KimPerformance and detection mechanism of a new class of catalyst (Pd, Pt, or Ag)adsorptive oxide (SnOx or ZnO)-insulator-semiconductor gas sensors," Sensors and Actuators, V. 22, 1994, pp. 4755.
    • Sensors and Actuators, V.
    • Kang, W.P.1    Kim, C.K.2
  • 7
    • 33845301707 scopus 로고    scopus 로고
    • Comparison and analysis of Pd- And Pt-GaAs Schottky diodes for hydrogen detection
    • 75, 1994, pp. 8175-8181.
    • W. P. Kang and Y. GurbuzComparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection," J. Appl. Phys., V. 75, 1994, pp. 8175-8181.
    • J. Appl. Phys., V.
    • Kang, W.P.1    Gurbuz, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.