Fabrication and electrical characterization of SI/SIGE P-channel MOSFETs with a delta doped boron layer

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 465-468

  Risch, L ^a   Fischer, H ^a   Hofmann, F ^a   Schafer, H ^a   Eller, M ^a   Aeugle, T ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-LAYERS; DELTA-DOPED; ELECTRICAL CHARACTERIZATION; MOSFETS; P CHANNELS; SI/SIGE;

EID: 11544326760     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. ATLAS 2D device simulation software, SILVACO International., Santa Clara, June 1995.
2. T. Vogelsang, F. Hofmann, H. Schäfer, L. Risch and K. Hofmann, "Modeling and Fabrication of a p-Channel SiGe MOSFET with Very High Mobility and Transconductance", Ext. Abstracts of the 1994 SSDM, p.877.
3. F. Hofmann, H. Schäfer, T. Vogelsang, L. Risch ,"A 0.4im Quantum Well p- Channel MOSFET with High Current, ESSDERC 94, pp. 489-492