ZnTe epitaxial growth by remote plasma enhanced metal organic chemical vapor deposition

Vacuum

Volumn 51, Issue 4, 1998, Pages 619-622

  Noda, Daiji ^a   Aoki, Toru ^a   Nakanishi, Yoichiro ^a   Hatanaka, Yoshinori ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; FREE RADICALS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032315526     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00261-9     Document Type: Article

References (6)

1. Park, R. M., Troffer, M. B., Rouleau, C. M., DePuydt, J. M. and Haase, M. A., Appl. Phys. Lett., 1990, 57, 2127.
2. Ohkawa, K., Karasawa, T. and Mitsuyu, T., Jpn. J. Appl. Phys., 1991, 30, L152.
3. Mitsuhashi, H., Mitsuhashi, I. and Kukimoto, H., J. Cryst. Growth, 1986, 77, 16.
4. Aoki, T., Morita, M., Nakanishi, Y. and Hatanaka, Y., Appl. Surf. Sci., 1996, 92, 132.
5. Hatanaka, Y., Aoki, T., Morita, M. and Nakanishi, Y., Appl. Surf. Sci., 1996, 100/101, 621.
6. Hayashi, K., Yoshino, J. and Kukimoto, H., Adv. Mater. Opt. Electron. , 1994, 4, 401.