Ion beam assisted deposition of organic light emitting devices: Enhanced optoelectronic properties

EPJ Applied Physics

Volumn 4, Issue 1, 1998, Pages 45-51

  Antony, R ^a   Moliton, A ^a   Ratier, B ^a   Moussant, C ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; DEPOSITION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; INTERFACES (MATERIALS); ION BEAMS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS;

CHARGE CARRIER CONFINEMENT; ION BEAM ASSISTED DEPOSITION; TRAP DENSITY; TRAPPED CHARGE LIMITED CURRENT;

LIGHT EMITTING DIODES;

EID: 0032312501     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998242     Document Type: Article

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