Cathodoluminescence microscopy of doped GaSb crystals

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 38-42

  Mendez B ^a   Piqueras, J ^a   Dutta, P S ^b   Dieguez, E ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Cathodoluminescence; Diffusion time; Tellurium

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TELLURIUM;

DIFFUSION TIME;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030397568     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01680-7     Document Type: Article

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