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Volumn 158, Issue 4, 1996, Pages 449-454
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Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium
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Author keywords
[No Author keywords available]
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Indexed keywords
ANTIMONY;
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
DIFFUSION;
ELECTRONS;
ERBIUM;
IMPURITIES;
LIQUID PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
ZINC;
BREAKDOWN VOLTAGE;
COMPLEX ACCEPTOR DEFECTS;
CONTACT RESISTANCE;
FREE EXCITON;
GETTERING;
RESIDUAL IMPURITIES;
SEMICONDUCTOR GROWTH;
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EID: 0030087339
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00540-4 Document Type: Article |
Times cited : (7)
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References (24)
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