Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 1997, Pages 8-12

  Chi, J Y ^a   Lu, K ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CARBON DOPING; CURRENT GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031343853     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)