Atomistic analysis of the vacancy diffusion mechanism

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 27-28

  List, S ^a   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; POTENTIAL ENERGY; SEMICONDUCTOR DEVICES;

ATOMISTIC ANALYSIS; DIFFUSION MECHANISMS; DOPANT ATOMS; LARGE AMOUNTS; MACROSCOPIC DIFFUSION; TRANSPORT COEFFICIENT; VACANCY DIFFUSION MECHANISM; VACANCY MECHANISMS;

DIFFUSION;

EID: 11644299861     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865257     Document Type: Conference Paper

References (4)

1. M. Orlowski, Appl. Phys. Lett. 53, 1323 (1988)
2. K. Maser, Experimentelle Technik der Physik 39, 169 (1991)
3. S. List, P. Pichler, and H. Ryssel, J. Appl. Phys. 76, 223 (1994)
4. S. M. Hu, Phys. Stat. Sol 60, 595 (1973)