Effects of recess channel (RC) depth in super self-aligned RC nMOSFETs for sub-100 nm device technology

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Chung, Doo Yeon ^a   Lee, Jong Ho ^a  

^a Wonkwang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032263029     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Y. Taur, et al., Proceeding of the IEEE 85, 486 (1997).
2. S. Asai, Y. Wada, Proceeding of the IEEE 85, 505 (1997).
3. M. Ono, IEEE Trans. on Electron Devices 42, 1822 (1995).
4. T. Yoshitomi, Symposium on VLSI Tech. Dig., 11 (1995).
5. J. Lyu, B. G. Park, K. Chun and J. D. Lee, IEDM Tech Dig., 431 (1995).
6. S. Kimura, et al., IEEE Trans. on Electron Devices 42, 94 (1995).
7. SILVACO International, ATHENA User's Manual-2D. Process Simulation Software (Santa Clara, 1996).
8. SILVACO International, ATLAS User's Manual-Device Simulation Software (Santa Clara, 1996).
9. K. Natori, I. Sasaki and F. Masuoka, IEEE Trans, on Electron Devices 25, 448 (1978).