New method for grafting a thin film metal-semiconductor-metal photodetector with a transimpedance amplifier and applications to multichip module packaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3288, Issue , 1998, Pages 16-22

  Morrison, Charles B ^a   Zhu, Zheng ^a   Steinberg, Joel ^a   Glinz, Andreas P ^a   Bechtel, James H ^a  

^a TACAN Corporation   (United States)

Author keywords

Epitaxial liftoff; Metal semiconductor metal photodetectors; Multichip modules

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; GRAFTING (CHEMICAL); MULTICHIP MODULES; PASSIVATION; PHOTOCURRENTS; PHOTODETECTORS; POLYIMIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

DARK CURRENT; EPITAXIAL LIFTOFF TECHNIQUE; INDIUM GALLIUM ARSENIDE PHOTODETECTOR; METAL-SEMICONDUCTOR-METAL PHOTODETECTOR; MULTICHIP MODULE PACKAGING; SURFACE PASSIVATION; THIN POLYIMIDE FILM; TRANSIMPEDANCE AMPLIFIER;

ELECTRONICS PACKAGING;

EID: 0032224246     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.307585     Document Type: Conference Paper

References (9)

1. New processing approach for grafting of optoelectronic devices and applications for multichip module packaging
2. Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications
3. Modeling of wide-area thin film metal-semiconductor-metal photodetectors for LIDAR applications
4. Metal-semiconductor-metal photodetector design for optical receivers
5. Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode pattern
6. Ultra-wide-band (>40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors
7. Nanoscale tera-herz metal-semiconductor-metal photodetectors
8. High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition