Wide-area thin film metal-semiconductor-metal photodetectors for LIDAR applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 40-47

  Morrison, Charles B ^a   Glinz, Andreas P ^a   Zhu, Zheng ^a   Bechtel, James H ^a   Frimel, Steven M ^a   Roenker, Kenneth P ^a  

^a TACAN Corporation   (United States)

Author keywords

Device modeling; Epitaxial liftoff; LIDAR; Metal semiconductor metal photodetectors

Indexed keywords

CAPACITANCE; MATHEMATICAL MODELS; OPTICAL COMMUNICATION; OPTICAL RADAR; SEMICONDUCTOR MATERIALS; SIGNAL TO NOISE RATIO; SUBSTRATES; THIN FILMS;

METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PD);

PHOTODETECTORS;

EID: 0032224412     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304501     Document Type: Conference Paper

References (8)

1. Nanoscale tera-herz metal-semiconductor-metal photodetectors
2. New processing approach for grafting of optoelectronic devices and applications for multichip module packaging
3. New method for grafting a thin film metal-semiconductor-metal photodetector to a transimpedence amplifier and applications to multichip module packaging
4. Metal-semiconductor-metal photodetector design for optical receivers
5. Modeling of wide-area thin film metal-semiconductor-metal photodetectors for LIDAR applications