Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3283, Issue , 1998, Pages 960-966

  Glinz, Andreas P ^a   Morrison, Charles B ^a   Zhu, Zheng ^a  

^a TACAN Corporation   (United States)

Author keywords

Collection current; Epitaxial liftoff; Interdigitated MSM photodetector; Modeling

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; METALS; OPTICAL RADAR; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; THIN FILM DEVICES;

BACK ILLUMINATIONS; COLLECTION CURRENT; EPITAXIAL LIFTOFF; FILM MEMBRANES; INTERDIGITATED MSM-PHOTODETECTOR; LIDAR APPLICATIONS; METAL PHOTODETECTORS; MODELING; SEMI-CONDUCTORS; SEMICONDUCTOR LAYERS;

PHOTODETECTORS;

EID: 0003327294     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.316651     Document Type: Conference Paper

References (7)

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2. C. B. Morrison, Z. Zhu, and J.H. Bechtel, "New method for grafting a thin flint metal-semiconductor-metal photodetector to a transimpedence amplifier and applications to multichip module packaging.", SPIE Proceedings from Conference on Optoelectronic Interconnects V, Vol. 3288, San Jose, Jan. 1998.
3. C. B. Morrison, A. Glinz, Z. Zhu, J.H. Bechtel, S.M. Fnmel, and K.P. Roenker, "Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications", SPIE Proceedings from Conference on Photodetectors: Materials and Devices III, Vol. 3287, San Jose, Jan. 1998.
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7. J.B.D. Soole and H. Schumacher, "InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications," IEEE J. Quantum Electron., vol. 27, pp. 737-752, 1991