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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3285, Issue , 1998, Pages 80-87

Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with decoupled confinement heterostructure

(5) Fujimoto, T a Yamada, Y a Oeda, Y a Okubo, A a Muro, K a

a MITSUI CHEMICALS INC (Japan)

Author keywords

AlGaAs laser diode; Decoupled confinement heterostructure; High power laser diode; Index guided structure

Indexed keywords

CLADDING (COATING); ELECTRIC CONDUCTIVITY; ETCHING; HETEROJUNCTIONS; HIGH POWER LASERS; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY;

DECOUPLED CONFINEMENT HETEROSTRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0032224018 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.307594 Document Type: Conference Paper

Times cited : (3)

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