Carrier spillover at 300, 195, and 77 K in InGaAs and GaAs single quantum wells

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2866-2872

  Ongstad, Andrew P ^a,b   Tilton, Michael L ^a,b   Bochove, Erik J ^a,c   Dente, Gregory C ^a,d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Rockwell Power Systems   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

^d GCD Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005245449     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363138     Document Type: Article

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