Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 1, 1996, Pages 29-36

  Baliga, Arvind ^a,b   Agahi, Farid ^a,c   Anderson, Neal G ^a,d   Lau, Kei May ^a,d   Cadambi, Srihari ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b Lasertron   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROMAGNETIC DISPERSION; LASER MODES; LIGHT EMISSION; LIGHT POLARIZATION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; SWITCHING;

CONSTANT GAIN CONTOUR METHOD; LIGHT CURRENT CHARACTERISTICS; LUTTINGER-KOHN VALENCE DISPERSION MODEL; MODE CONFINEMENT FACTOR; OPTICAL MATRIX ELEMENTS; SINGLE WELL LASER DIODES; TENSILE STRAIN; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0029769448     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481917     Document Type: Article

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