Spectroellipsometric characterization of ion implanted semiconductors and porous silicon

Acta Physica Slovaca

Volumn 48, Issue 4, 1998, Pages 441-450

  Lohner, T ^a   Khanh N Q ^a   Zolnai, Zs ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032221160     PISSN: 03230465     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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