Defect characterization of a-SiC : H and a-SiN : H alloys produced by ultrahigh vacuum plasma enhanced chemical vapor deposition in different plasma conditions

Physica B: Condensed Matter

Volumn 254, Issue 1-2, 1998, Pages 99-106

  Stapinski, T ^a   Ambrosoneb, G ^b   Coscia, U ^b   Giorgis, F ^c   Pirri, C F ^c  

^a AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^b INFM   (Italy)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

Electronic density of states; Plasma enhanced chemical vapor deposition; Silicon carbon alloys; Silicon nitrogen alloys

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

OPTICAL GAPS; ULTRAHIGH VACUUM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SILICON ALLOYS;

EID: 0032208125     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00408-6     Document Type: Article

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