Optical properties of pseudomorphic Si 1-xGe x for Si-based waveguides at the λ = 1300-nm and 1550-nm telecommunications wavelength bands

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 6, 1998, Pages 990-995

  Janz, S ^a,b   Baribeau, J M ^b   Delage A ^b   Lafontaine, H ^b   Mailhot, S ^b   Williams, R L ^b   Xu, D X ^b   Bruce, D M ^c   Jessop, P E ^a,c   Robillard, M ^c  

^a IEEE   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

Germanium alloys; Optical propagation in anisotropic media; Optical variables measurement; Optical waveguides; Planar waveguides; Semiconductor waveguides; Silicon alloys; Waveguides

Indexed keywords

ANNEALING; BIREFRINGENCE; LIGHT POLARIZATION; LIGHT PROPAGATION; OPTICAL COMMUNICATION; OPTICAL VARIABLES MEASUREMENT; PHOTOELASTICITY; REFRACTIVE INDEX; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

PHOTOELASTIC THEORY; SEMICONDUCTOR WAVEGUIDES;

OPTICAL WAVEGUIDES;

EID: 0032207094     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.736094     Document Type: Article

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