Reaction of hydrogen fluoride gas at high temperatures with silicon oxide film and silicon surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6123-6127

  Habuka, Hitoshi ^a   Otsuka, Toru ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Hydrogen fluoride gas; Silicon; Silicon carbide; Silicon dioxide

Indexed keywords

ETCHING; HYDROFLUORIC ACID; PITTING; SILICA; SILICON CARBIDE; SILICON WAFERS; SURFACE ROUGHNESS;

HYDROGEN FLUORIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032206204     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6123     Document Type: Article

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