In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Electrochemical and Solid-State Letters

Volumn 1, Issue 2, 1998, Pages 77-79

  Park, Heungsoo ^a,d   Ko, Daehong ^b   Apte, Pushika ^c,e   Helms, C R ^a,f   Saraswat, K C ^c,f  

^a STANFORD UNIVERSITY   (United States)

^b Yonsei University   (South Korea)

^c Samsung Electronics Co Ltd ^*  (United States)

^d SAMSUNG Electronics   (South Korea)

^e TEXAS INSTRUMENTS   (United States)

^f ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HYDROFLUORIC ACID; OXIDES; SILICON WAFERS;

ANHYDROUS HYDROGEN FLUORIDE; NATIVE OXIDE REMOVAL;

SURFACE CLEANING;

EID: 0032141639     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390642     Document Type: Article

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