In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Electrochemical and Solid-State Letters

Volumn 1, Issue 2, 1998, Pages 77-79

  Park, Heungsoo ^a,d   Ko, Daehong ^b   Apte, Pushika ^c,e   Helms, C R ^a,f   Saraswat, K C ^c,f  

^a STANFORD UNIVERSITY   (United States)

^b Yonsei University   (South Korea)

^c Stanford University   (United States)

^d SAMSUNG Electronics   (South Korea)

^e TEXAS INSTRUMENTS   (United States)

^f ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HYDROFLUORIC ACID; OXIDES; SILICON WAFERS;

ANHYDROUS HYDROGEN FLUORIDE; NATIVE OXIDE REMOVAL;

SURFACE CLEANING;

EID: 0032141639     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390642     Document Type: Article

References (11)

1. S. J. Fonash, J. Electrochem. Soc., 137, 3885 (1990).
2. P. Apte, K. C. Saraswat, M. M. Moslehi, and R. Yeakley, IEEE Trans. Semicond. Manuf., 5, 180 (1992).
3. C. C. Chang, Surf. Sci., 25, 53 (1971).
4. G. E. McGuire, Auger Electron Spectroscopy Reference Manual, p. 7, Plenum Press, New York (1979).
5. M. Monta, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys., 68, 1272 (1990).
6. J. M. de Larios, Ph.D Thesis, Stanford University, Stanford, CA (1989).
7. R. Wise, D. Frystak, J. Barnett, P. Grothe, B. Fowler, and E. Forest, in CVD XIII, T. M. Besmann, M. D. Allendorf, McD. Robinson, and R. K. Ulrich, Editors, PV 96-1, p. 972, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
8. N. Miki, H. Kikuyama, I. Kawanabe, M. Miyashita, and T. Ohmi, IEEE Trans. Electron Devices. Ed-37, 107 (1990).
9. A. E. T. Kuiper and E. G. C. Lathouwers, J. Electrochem. Soc., 139, 2594 (1992).
10. Y. Kobayashi, Y. Shinoda, and K. Sugii, Jpn. J. Appl. Phys., 28, 2421 (1989).
11. T. Yamazaki, N. Miyata, T. Aoyama, and T. Ito, J. Electrochem. Soc., 139, 1176 (1992).