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Volumn 281-282, Issue 1-2, 1996, Pages 1-4

Structural study of epitaxial growth on silicon surfaces

Author keywords

Epitaxy; High energy electron diffraction (RHEED); Scanning tunnelling microscopy; Silicon

Indexed keywords

PYROLYSIS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; STACKING FAULTS; SURFACE STRUCTURE; SURFACES;

EID: 0030217734     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08560-4     Document Type: Article
Times cited : (10)

References (15)
  • 10
    • 0000067459 scopus 로고
    • S.Y. Tong, M.A. Van Hove, K. Takayanagi and X.D. Xie (eds.), Springer-Verlag, Berlin
    • A. Ichimiya, in S.Y. Tong, M.A. Van Hove, K. Takayanagi and X.D. Xie (eds.), Structure of Surfaces III, Springer-Verlag, Berlin, 1991, p. 162.
    • (1991) Structure of Surfaces , vol.3 , pp. 162
    • Ichimiya, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.