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Volumn 281-282, Issue 1-2, 1996, Pages 1-4
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Structural study of epitaxial growth on silicon surfaces
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Author keywords
Epitaxy; High energy electron diffraction (RHEED); Scanning tunnelling microscopy; Silicon
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Indexed keywords
PYROLYSIS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR GROWTH;
SILICON;
SILICON WAFERS;
STACKING FAULTS;
SURFACE STRUCTURE;
SURFACES;
DIMER ADATOM STACKING FAULT;
METASTABLE PHASE;
PERIODICITY;
STEP EDGES;
EPITAXIAL GROWTH;
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EID: 0030217734
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(96)08560-4 Document Type: Article |
Times cited : (10)
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References (15)
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