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Volumn 7, Issue 10, 1998, Pages 1437-1450

On the nature of extended defects in CVD diamond and the origin of compressive stresses

Author keywords

CVD diamond; Defects; Stress; Transmission electron microscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LOSS SPECTROSCOPY; RAMAN SPECTROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

EID: 0032194797     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(98)00212-X     Document Type: Article
Times cited : (20)

References (37)
  • 23
    • 6244251920 scopus 로고
    • Semiconductor molecular-beam epitaxy at low temperatures
    • Eaglesham D.J. Semiconductor molecular-beam epitaxy at low temperatures. J. Appl. Phys. 77:1995;3597-3617.
    • (1995) J. Appl. Phys. , vol.77 , pp. 3597-3617
    • Eaglesham, D.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.