MoS2 deposited by ion beam assisted deposition: 2H or random layer structure?

Journal of Materials Research

Volumn 13, Issue 10, 1998, Pages 3001-3007

  Dunn, D N ^a   Seitzman, L E ^a   Singer, I L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DEPOSITION; ELECTRON DIFFRACTION; FILM GROWTH; ION BEAMS; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM ASSISTED DEPOSITION; MOLYBDENUM SULFIDE; SELECTED AREA ELECTRON DIFFRACTION;

MOLYBDENUM COMPOUNDS;

EID: 0032188686     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0410     Document Type: Article

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