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Volumn 193, Issue 3, 1998, Pages 293-299

Composition control of InGaAsP in metalorganic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine

(4) Kim, In a Uppal, Kushant a,b Choi, Won Jin a Dapkus, P Daniel a

a University of Southern California ^* (United States)

b SDL INC (United States)

Author keywords

InGaAsP; MOCVD; TBA; TBP

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SPECIFIC HEAT OF SOLIDS;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; TERTIARYBUTYLARSINE; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032183644 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00556-9 Document Type: Article

Times cited : (10)

References (16)

1
- 51249172007
- G.B. Stringfellow, J. Electron. Mater. 17 (1988) 327.
- (1988) J. Electron. Mater. , vol.17 , pp. 327
- Stringfellow, G.B.¹

2
- 0028761909
- S. Ae, T. Terakado, T. Nakamura, T. Torikai, T. Uji, J. Crystal Growth 145 (1994) 852.
- (1994) J. Crystal Growth , vol.145 , pp. 852
- Ae, S.¹ Terakado, T.² Nakamura, T.³ Torikai, T.⁴ Uji, T.⁵

3
- 0028371867
- M.E. Heimbuch, A.L. Holmes, C.M. Reaves, M.P. Mack, S.P. Denbaars, L.A. Coldren, J. Electron. Mater. 23 (1994) 87.
- (1994) J. Electron. Mater. , vol.23 , pp. 87
- Heimbuch, M.E.¹ Holmes, A.L.² Reaves, C.M.³ Mack, M.P.⁴ Denbaars, S.P.⁵ Coldren, L.A.⁶

4
- 0030086394
- A. Mathur, P.D. Dapkus, IEEE J. Quantum Electron. 32 (1996) 222.
- (1996) IEEE J. Quantum Electron. , vol.32 , pp. 222
- Mathur, A.¹ Dapkus, P.D.²

5
- 0026944082
- M. Horita, M. Suzuki, Y. Matsushima, J. Crystal Growth 124 (1992) 123.
- (1992) J. Crystal Growth , vol.124 , pp. 123
- Horita, M.¹ Suzuki, M.² Matsushima, Y.³

6
- 0000847537
- T. Sakata, T. Nakamura, S. Ae, T. Terakado, Y. Inomoto, T. Torikai, H. Hasumi, J. Electron. Mater. 25 (1996) 401.
- (1996) J. Electron. Mater. , vol.25 , pp. 401
- Sakata, T.¹ Nakamura, T.² Ae, S.³ Terakado, T.⁴ Inomoto, Y.⁵ Torikai, T.⁶ Hasumi, H.⁷

7
- 51649151698
- B.Y. Maa, P.D. Dapkus, J. Electron. Mater. 20 (1991) 589.
- (1991) J. Electron. Mater. , vol.20 , pp. 589
- Maa, B.Y.¹ Dapkus, P.D.²

8
- 0024664387
- S.H. Li, C.A. Larsen, L.I. Buchan, G.B. Stringfellow, J. Electron. Mater. 18 (1989) 457.
- (1989) J. Electron. Mater. , vol.18 , pp. 457
- Li, S.H.¹ Larsen, C.A.² Buchan, L.I.³ Stringfellow, G.B.⁴

9
- 0024765431
- S.H. Li, N.I. Buchan, C.A. Larsen, G.B. Stringfellow, J. Crystal Growth 98 (1989) 309.
- (1989) J. Crystal Growth , vol.98 , pp. 309
- Li, S.H.¹ Buchan, N.I.² Larsen, C.A.³ Stringfellow, G.B.⁴

10
- 0024715409
- S.H. Li, N.I. Buchan, C.A. Larsen, G.B. Stringfellow, J. Crystal Growth 96 (1989) 906.
- (1989) J. Crystal Growth , vol.96 , pp. 906
- Li, S.H.¹ Buchan, N.I.² Larsen, C.A.³ Stringfellow, G.B.⁴

11
- 0043123566
- D. Sheriff, J.E. Lamirande, Semiconductor Int. 20 (3) (1997) 93.
- (1997) Semiconductor Int. , vol.20 , Issue.3 , pp. 93
- Sheriff, D.¹ Lamirande, J.E.²

12
- 0042121655
- J.P. Duchemin, J.P. Hirtz, M. Razeghi, M. Bonnet, S.D. Hersee, J. Crystal Growth 55 (1981) 64.
- (1981) J. Crystal Growth , vol.55 , pp. 64
- Duchemin, J.P.¹ Hirtz, J.P.² Razeghi, M.³ Bonnet, M.⁴ Hersee, S.D.⁵

13
- 0041620752
- T. Iwamoto, K. Mori, M. Mizuta, H. Kukimoto, Jpn. J. Appl. Phys. 22 (1983) L191.
- (1983) Jpn. J. Appl. Phys. , vol.22
- Iwamoto, T.¹ Mori, K.² Mizuta, M.³ Kukimoto, H.⁴

14
- 0021487907
- S. Sugou, A. Kameyama, Y. Miyamoto, K. Furuya, Y. Suematsu, Jpn. J. Appl. Phys. 23 (1984) 1182.
- (1984) Jpn. J. Appl. Phys. , vol.23 , pp. 1182
- Sugou, S.¹ Kameyama, A.² Miyamoto, Y.³ Furuya, K.⁴ Suematsu, Y.⁵

15
- 0024104401
- M.R. Leys, H. Titze, L. Samuelson, J. Petruzzello, J. Crystal Growth 93 (1988) 504.
- (1988) J. Crystal Growth , vol.93 , pp. 504
- Leys, M.R.¹ Titze, H.² Samuelson, L.³ Petruzzello, J.⁴

16
- 0027906407
- T. Sasaki, M. Kitamura, I. Mito, J. Crystal Growth 132 (1993) 435.
- (1993) J. Crystal Growth , vol.132 , pp. 435
- Sasaki, T.¹ Kitamura, M.² Mito, I.³

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