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Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 5, 1998, Pages 337-346

Diffusion barrier properties of electroless Ni for electroless Cu using Cu plating employing hypophosphite as a reducing agent

(3) Lee, Chwan Ying a Huang, Tzuen Hsi a Lu, Shing Chi a

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGENTS; AUGER ELECTRON SPECTROSCOPY; CRYSTALLIZATION; DRY ETCHING; ELECTROLESS PLATING; ENERGY DISPERSIVE SPECTROSCOPY; METALLOGRAPHIC MICROSTRUCTURE; NICKEL; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SODIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; DIFFUSION IN SOLIDS; HEAT TREATMENT;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; REDUCING AGENT; SODIUM HYPOPHOSPHITE; REDUCING AGENTS;

COPPER; COPPER PLATING;

EID: 0032183354 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1008977002472 Document Type: Article

Times cited : (19)

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