Electrical properties of the perovskite (Pb, La)TiO3 films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 5, 1998, Pages 383-390

  Chung, S W ^a   Kim, Y I ^a   Park, H L ^a   Lee, W J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; FERROELECTRIC THIN FILMS; LANTHANUM; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; STOICHIOMETRY; SUBSTRATES; THIN FILMS; COMPOSITION EFFECTS; ELECTRIC SPACE CHARGE; FERROELECTRICITY; PEROVSKITE; SEMICONDUCTING LEAD COMPOUNDS; THERMAL EFFECTS;

CAPACITANCE VOLTAGE CHARACTERISTIC; POLARITY DEPENDENCE; SCHOTTKY CONDUCTION; LEAD LANTHANUM TITANATE;

PEROVSKITE; SEMICONDUCTING FILMS;

EID: 0032182833     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008992327913     Document Type: Article

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