|
Volumn 164, Issue 1-4, 1996, Pages 202-207
|
Kinetics of chemical beam epitaxy for high quality ZnS film growth
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BAND STRUCTURE;
ELECTROLUMINESCENCE;
EXCITONS;
FILM GROWTH;
FREE RADICALS;
GROWTH KINETICS;
MOLECULAR BEAM EPITAXY;
OPTOELECTRONIC DEVICES;
PHOTOLUMINESCENCE;
SEMICONDUCTING ZINC COMPOUNDS;
THIN FILMS;
ALKYL RADICALS;
BAND EDGE;
BUFFER LAYER;
GROWTH RATE;
METALLORGANIC MOLECULAR BEAM EPITAXY;
SURFACE REACTION;
CHEMICAL BEAM EPITAXY;
|
EID: 0030193123
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(96)00005-X Document Type: Article |
Times cited : (16)
|
References (12)
|