The hydrostatic pressure dependence of the threshold current in 1.3 μm InGaAsP quantum well semiconductor diode lasers

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 513-518

  Phillips, A F ^a   Sweeney, S J ^a   Adams, A R ^a   Thijs, P J A ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Uniphase Netherlands BV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249328     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<513::AID-PSSB513>3.0.CO;2-7     Document Type: Article

References (11)

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