Conduction mechanisms in boron implanted diamond films

Diamond and Related Materials

Volumn 5, Issue 6-8, 1996, Pages 752-756

  Fontaine, F ^a   Gheeraert, E ^a   Deneuville, A ^a  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Boron doping; Defects; Electrical conductivity; Ion implantation

Indexed keywords

EID: 0000568239     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00383-5     Document Type: Article

References (12)

1. J.J. Hauser and J.R. Patel, Solid State Commun., 18 (1976) 789.
2. J.F. Prins, Phys. Rev. B, 31 (1985) 2472.
3. S. Prawer and R. Kalish, Phys. Rev. B, 51 (1995) 15711.
4. R.A. Spits, J.F. Prins and T.E. Derry, Nucl. Instrum. Methods Phys. Res. B, 85 (1994) 347.
5. J.J. Hauser, J.R. Patel and J.W. Rodgers, Appl. Phys. Lett., 30 (1977) 129.
6. F. Fontaine, A. Deneuville, L. Abello, G. Lucazeau, E. Gheeraert and P. Gonon, Diamond and Relat. Mater., 3 (1994) 623.
7. E. Gheeraert, F. Fontaine, A. Deneuville, Y.L. Khong, and A.T. Collins, Diamond Relat. Mater., 3 (1994) 737.
8. E. Gheeraert, A. Deneuville, E. Bustarret and F. Fontaine, Diamond Relat. Mater., 4 (1995) 684.
9. J.F. Morhange, R. Beserman and J, Bourgoin, Jpn. J. Appl. Phys., 14 (1975) 544.
10. P.R. Brosious, J.W. Corbett and J.C. Bourgoin, Phys. Status Solidi, 21 (1974) 677.
11. G. Wagoner, Phys. Rev., 118 (1960) 647.
12. N.F. Mott, J. Non-Cryst. Solids, 1 (1972) 8.