2×2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching

Electronics Letters

Volumn 32, Issue 1, 1996, Pages 39-40

  Oh, Kwan Ryong ^a   Ahn, Joo Heon ^a   Kim, Jeong Soo ^a   Lee, Seung Won ^a   Kim, Hong Man ^a   Pyun, Kwang Eui ^a   Park, Hyang Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Integrated optics; Optical switches; Reactive ion etching; Semiconductor optical amplifiers

Indexed keywords

CRYSTALS; DIFFUSION; FABRICATION; INTEGRATED OPTICS; LIGHT AMPLIFIERS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

DOUBLE END PUMPING; INJECTION CURRENT; OPTICAL COUPLING; PHOTONIC SPACE SWITCH ARRAYS; SEMICONDUCTOR OPTICAL AMPLIFIERS; WAVEGUIDE AMPLIFIER INTERFACE; WET CHEMICAL ETCHING;

SEMICONDUCTOR LASERS;

EID: 0030568227     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960054     Document Type: Article

References (4)

1. LINDGREN, S., OBERG, M.G., ANDRE, J., NILSSON, S., BROBERG, B., HOLMBERG, B., and BACKBOM, L.: 'Loss-compensated optical Y-branch switch in InGaAsP-InP', J. Lightwave Technol., 1990, LT-8, pp. 1591-1595
2. JANSON, M., LUNDGREN, L., MORNER, A.C., RASK, M., STOLZ, B., GUSTAVSSON, M., and THYLEN, L.: 'Monolithically integrated 2×2 InGaAsP/InP laser amplifier gate switch arrays', Electron. Lett., 1992, 28, pp. 776-778
3. BURTON, J.D., FIDDYMOUNT, P.J., ROBERTSON, M.J., and SULLY, P,: 'Monolithic InGaAsP-InP laser amplifier gate switch matrix', IEEE J. Quantum Electron., 1993, QE-29, pp. 2023-2027
4. AHN, J.H., OH, K.R., KIM, J.S., LEE, S.W., PYUN, K.E., and PARK, H.M.: 'Uniform and high coupling efficiency between InGaAsP/InP buried heterostructure optical amplifier and monolithically butt-coupled waveguide using reactive ion etching', to be published in IEEE Photonics Technol. Lett.