A vertical high voltage termination structure for high-resistivity silicon detectors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 364-369

  Segal, J D ^a  

^a HPL Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DESIGN; ELECTRIC CONDUCTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

HIGH RESISTIVITY SILICON DETECTORS; HIGH VOLTAGE DIODE TERMINATION STRUCTURE;

RADIATION DETECTORS;

EID: 0032099502     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682409     Document Type: Article

References (11)

1. TMA Medici: "Two-Dimensional Device Simulator Program, Technology Modeling Associates, Inc. , 1993
2. V. Boisson et al, "Analytical Expression for the Potential of Guard Rings of Diodes Operating in Punchthrough Mode", Trans, on Electron Devices, Vol ED-32, No. 4, April 1985.
3. G. Charitat et al. "1000 and 1500 Volts Planar Devices Using Field Plate and Semi-resistive Layers: Design and Fabrication", 1990 IEEE IEDM Technical Digest, p. 803-806.
4. R. Stengl and E. Falck, "Surface Breakdown and Stability of High-Voltage Planar Junctions", IEEE Trans, on Electron Devices, Vol 38, No 9, September 1991, p. 2181-2188.
5. S. Merchant, "Arbitrary Lateral Diffusion Profiles", IEEE Trans, on Electron Devices, Vol 42 No. 12 December 1995, p. 2226-2230.
6. H. Seidel et al, "Anisotropie Etching of Crystalline Silicon in Alkaline Solutions", I. Electrochemical Soc. , Vol 137, No. 11, Nov 1990, p. 3612-3632.
7. C. H. Aw, CMOS Circuits for Integrated Particle Detection and Imaging Arrays, Ph. D. Thesis, Stanford University, 1996.
8. Snoeys, W. , et al. "PIN detector arrays and integrated readout circuitry on high-resistivity float-zone silicon. " IEEE Trans, on Electron Devices (June 1994) vol. 41, no. 6, p. 903-12.
9. J. Iwanczyk et al, "Simulation and Modeling of New Silicon X-ray Drift Detector Designed for Synchotron Radiation Applications," Nuclear Inst. and Methods A380(1996)p. 288-294.
10. J. D. Segal et al, "A New Structure for Controlling Dark Current due to Surface Generation in Drift Detectors", to be published, Nuclear Inst. and Methods.
11. F. Arfelli, et al, "An "edge-on" silicon strip detector for X-ray imaging", 1996 IEEE Nuclear Science Symposium Conference Record, p. 237-241.