SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 463-467

Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs/GaAs MQW pin diodes

(6) Izpura, I a Valtuena J F a Sanchez Rojas J L a Sacedon A a Calleja, E a Munoz E a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PIEZOELECTRIC MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SUBSTRATES;

OPTICAL PUMP ELECTRICAL PROBE TECHNIQUES; PHOTOLUMINESCENCE MEASUREMENT; PROBE ABSORPTION MEASUREMENT; TIME RESOLVED PHOTOCURRENT; TIME RESOLVED PUMP MEASUREMENT; TRANSIENT NEGATIVE PHOTOCURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029711186 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00311-8 Document Type: Article

Times cited : (5)

References (10)

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