X-ray photoelectron diffraction and surface core-level shift study of clean InP (001)

Surface Science

Volumn 412-413, Issue , 1998, Pages 625-630

  Shimomura, M ^a,b   Sanada, N ^a   Kaneda, G ^a   Takeuchi, T ^a   Suzuki, Y ^a   Fukuda, Y ^a   Huff, W R A ^b,c   Abukawa, T ^b   Kono, S ^b   Yeom, H W ^c   Kakizaki, A ^c,d  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

Indium phosphide; Low index single crystal surfaces; Photoelectron diffraction; Semiconductor surfaces; Surface structure; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ANNEALING; BINDING ENERGY; ELECTRON DIFFRACTION; ION BOMBARDMENT; PHOTOEMISSION; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE TREATMENT; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW INDEX SINGLE CRYSTALS; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY (SRPES); X RAY PHOTOELECTRON DIFFRACTION (XPD);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032165312     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00494-4     Document Type: Article

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