Formation of epitaxial CoSix suicide at the Co/CoSi2(111) interface studied by photoemission and band structure calculations

Surface Science

Volumn 352-354, Issue , 1996, Pages 617-621

  Hong, S ^a   Sonnet, P ^a   Stauffer, L ^a   Wetzel, P ^a   Gewinner, G ^a   Bolmont, D ^a   Pirri, C ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Angle resolved photoemission; Epitaxy; Metal semiconductor interfaces; Silicides; X ray photoelectron spectroscopy

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CHARACTERIZATION; COBALT; CRYSTALLOGRAPHY; ELECTRON EMISSION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MONOLAYERS; THIN FILMS;

ANGLE RESOLVED PHOTOEMISSION; HUCKEL THEORY; SILICIDE;

COBALT ALLOYS;

EID: 0030148836     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01240-0     Document Type: Article

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