New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1549-1552

  Lai, P T ^a   Jingping, Xu ^a   Zeng, X ^a   Cheng, Y C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; SILICA; SILICON WAFERS;

GATE INDUCED DRAIN LEAKAGE (GIDL); GATE OXIDES; HOT CARRIER STRESS;

MOSFET DEVICES;

EID: 0030291015     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00093-7     Document Type: Article

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