High-frequency power applications using wide-bandgap semiconductors

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 81, Issue 9, 1998, Pages 54-61

  Ota, Yorito ^a,b,c,d,e  

^a PANASONIC CORPORATION   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c Wireless Research Laboratory   (Japan)

^d Semiconductor Research Center   (Japan)

^e IEEE   (Japan)

Author keywords

GaAs; High frequency; Mobile communication; Power transistor; SiC

Indexed keywords

MOBILE TELECOMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SILICON CARBIDE;

HIGH-FREQUENCY POWER DEVICES; POWER TRANSISTORS;

POWER ELECTRONICS;

EID: 0032154878     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1520-6432(199809)81:9<54::AID-ECJB7>3.0.CO;2-0     Document Type: Article

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